NEGF simulations of a junctionless Si gate-all-around nanowire transistor with discrete dopants
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چکیده
منابع مشابه
Perturbative vs Non-Perturbative Impurity Scattering in a Thin Si Gate-All-Around Nanowire transistor: A NEGF study
Nanowires are strong candidates as potential replacements for Bulk MOSFET architectures due to their better electrostatic integrity and performance. Impurity scattering is the source of series resistance that degrades the performance of small, doped nanowire transistors. In this work we have used a silicon nanowire transistor to investigate the inclusion of series resistance in quantum transpor...
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ژورنال
عنوان ژورنال: Solid-State Electronics
سال: 2012
ISSN: 0038-1101
DOI: 10.1016/j.sse.2011.10.028